CVD diamond (Chemical Vapor Deposition Diamond) , at Tianjin Baolixin, is produced throgh Dc Arc Plasma Jet method, the growth conditions are created by thermal disassociation of hydrogen, and a gaseous source of carbon in plasma, with a gas temperature above 2000 ℃and subatmospheric pressure, that depositing polycrystalline diamond as a layer on a substrate (or control growth condition to deposit monocrystalline diamond).
CVD diamond does not contain any metal catalyst, so its thermal stability is close to natural diamond. CVD diamond grains are arraying in random order, and have none-brittle cleavage surface, so it appears isotropy.
(一) CVD Specifications
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Hardness
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Tensile strength
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Compressive strength
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Friction factor
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8000~10000Kg/mm2
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272 Kg/mm2
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9.8×1013 Kg/mm2
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0.05~1
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Young’s modulus
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Density
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Coefficient of thermal shock
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Poisson's ratio
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1.05GPa
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3.51g/cm3
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107W/m
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0.22
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Coefficient of thermal conductivity
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Thermal expansion coefficient
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Resistivity
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Relative permittivity
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8~20W/(cm·K)
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2.3×10-6/℃
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~106Ω·m
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5.7
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Electron mobility
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Hole mobility
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Electron drift velocity
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Bandgap energy
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2200cm2/V·S
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1800 cm2/V·S
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2.5×107cm/s
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5.45ev
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(二) DC Arc Plasma Jet method to product CVD diamond.
At present, in the CVD industry, there are three main technics to produce CVD diamond: hot-filament method, microwave CVD method, DC Arc Plasma Jet method, among them, the DC Arc Plasma Jet method is superior as its high grow speed, higher purity. With so many outstanding and consistent properties , CVD diamond has been optimized for mechanical, microelectronics, thermals, optics, aerospace applications etc.
We have advanced DC Arc Plasma Jet machines and high production skills, the CVD diamonds we produced have stable quality, are well recognized by customers.
